Optical and transport properties of In_(0.49)Ga_(0.51)P/In_(0.49)(Ga_(0.6)Al_(0.4))_(0.51)P single quantum well structure with digital alloy barriers

摘要

Influence of the digital alloy nanostructuring of barriers in In_(0.49)Ga_(0.51)P/In_(0.49)(Ga_(0.6)Al_(0.4))_(0.51)P single quantum well structure on its optical and transport properties has been theoretically investigated. Calculated band structure, low-temperature absorption spectra, room-temperature material gain spectra and capture/escape times have been compared for two kinds of structures with monolithic and nanostructured barriers. It has been shown that the optical characteristics are not affected so dramatically as transport properties. The design of digital alloys has a strong influence on the capture and escape times. We found that both the gain and absorption spectra in digital alloy structure are almost insensible to embedding of the digital alloy barriers, but the escape time can be more than two times reduced depending on barrier width of the digital alloy.