Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x) Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition.

摘要

III-Phosphide self-assembled quantum dot (SAQD or simply QD) structures offer the potential to realize injection lasers operating in the visible spectral region with improved performance characteristics such as low threshold current density high charactenstic temperature and high differential gain. Also SAQD growth can overcome the limitation of lattice matching between the substrate and the epitaxial active region due to the inflinsic nature of the growth mode (i.e. strain-induced S-K growth).