Compositional and Strain Characterization of Ion-Beam-Synthesized Ge_(x)Si_(1-x) Thin Films

摘要

A thin film of Ge-rich Ge_(x)Si_(1-x) on a (100) Si substrate was synthesized by ion implantation followed by thermal oxidation. Proper oxidation conditions were maintained to produce a film with Ge atomic content of more than 95percent, confirmed by both high-resolution Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. The strain state of the Ge-rich thin film is a function of its thickness, as determined by the implantation fluence. The use of Raman spectroscopy to monitor the composition and strain state of the Ge thin film formed is discussed.