Amorphization and Solid-Phase Epitaxial Growth of C-Cluster Ion-Implanted Si

摘要

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C_(7)H_(7) ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 X 10~(15) cm~(-2) to 8.0 X 10~(15) cm~(-2) into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of approx5.0 X 10~(14) cm~(-2). Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free growth for C doses of 0.5 X 10~(15) cm~(-2) to 1.0 X 10~(15) cm~(-2). At higher doses, growth was defective and eventually polycrystalline due to induced in-plane tensile stress from substitutional C incorporation.