Z-Contrast Imaging of Dopant Precipitation and Redistribution During Solid and Liquid Phase Epitaxial Growth of Ion-Implanted Si

摘要

Z-contrast STEM using a high angle annular detector has been used to study precipitation and redistribution of dopant during solid and liquid phase epitaxial growth of In sup + and Sb sup + implanted Si. Both the pile-up phenomenon seen during solid phase regrowth and the long-range redistribution of dopant accompanying amorphous to polycrystalline transformation have been directly linked to the presence of highly mobile liquid precipitates. Quantitative Z-contrast imaging has been used to study the dopant distribution between cell walls following pulsed laser annealing. The potential of Z-contrast STEM for providing high resolution atomic structure imaging with high elemental sensitivity is discussed. (ERA citation 12:041379)