Decreasing of Depth of Implanted-Junction Rectifier in Semiconductor Heterostructure by Optimized Laser Annealing

摘要

It has been recently shown, that inhomogeneity of a multilayer structure leads to increasing of sharpness of diffusion-junction and implanted-junction rectifiers, which were formed in the multilayer structure. It has been also shown, that together with increasing of the sharpness homogeneity of impurity distribution in doped area increases. The both effect could be increased by formation an inhomogeneous distribution of temperature (for example, by laser annealing). Some conditions on correlation between inhomogeneities of the multilayer structure ant temperature distribution has been considered. Annealing time has been optimized for laser pulse annealing.