Trapped Holes Effect on Slow State Generation after Substrate Hole Injection in pMOSFETs

摘要

Defects created in p-metal-oxide-semiconductor-field-effect transistors by substrate-hole injection are studied. Both fast and slow interface states are found to be created during the holes injection process. After terminating the stress and applying positive gate bias, fast interface states are found to keep increasing, while slow states reduction and trapped holes annihilation are observed. The build up of fast interface states during and post stress is a consequence of holes injection and annihilation However, the trapped holes have no influence on the number of slow states present in the oxide. The effect of trapped holes annihilation on both fast and slow states suggests that their formation mechanisms are not the same.