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Method of refreshing a charge-trapping nonvolatile memory using band-to-band tunneling hot hole (BTBTHH) injection
Method of refreshing a charge-trapping nonvolatile memory using band-to-band tunneling hot hole (BTBTHH) injection
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机译:使用带间隧道热空穴(BTBTHH)注入刷新电荷陷阱非易失性存储器的方法
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摘要
A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.
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