On the slow state generation after substrate hole injection in p-MOSFETs

摘要

The damage created in p-metal-oxide-semiconductor-field-effect (p-MOSFET) transistors by hot hole injection into the oxide is investigated. It is found that hole injection creates fast interface states not only during the injection, but also after the injection is terminated. In addition, slow state density increases during hole injection and decreases post the injection. There is a lack of correlation between the trapped holes in the oxide and the slow state creation, which is against recently reported results on trapped holes inducing slow interface states in MOSFETs.