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Characterization of DLC films obtained at room temperature by pulsed-dc PECVD

机译:室温下通过脉冲直流PECVD获得的DLC膜的表征

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Diamond-like carbon films were prepared at room temperature from asymmetric bipolar pulsed-dc methane glow discharges, up to 1600 V of negative voltage pulse and 50-200 kHz of pulse frequency. Plasma parameters within a pulse cycle and at different peak voltage amplitudes were characterized by a Langmuir probe, which measured the I-V characteristics and the electron energy distribution function. Electron and ion density, electron temperature and averaged electron energy are found to increase along with negative peak voltage. Moreover, variations of electron temperature and density of charged species are registered between high- and low-pulse level. Meta-stable dissociation of methane was detected at electron energies of approximately 12 eV. Properties of the films are discussed as a function of the growth parameters obtained by plasma diagnostics, in order to establish their influence on film features. The deposition rate and residual stress of the film, which reached 50 nm/ min and was minor than 1 GPa, respectively, were correlated to the enhancement of the degree of ionization at high power values. Surface topography shows an increase of roughness, up to 1 nm of RMS value, for films deposited at high peak voltages, whereas the friction coefficient, measured by atomic force microscopy in contact mode, is approximately constant. Surface energy was characterized by contact angle measures with water, which value is approximately 85 deg , and shows no dependence with deposition conditions. This deposition technique has an application in industry for deposition of large area coatings and it is especially indicated to process materials with plasma involving a great number of technological parameters.
机译:在室温下,由不对称的双极性脉冲直流甲烷辉光放电,高达1600 V的负电压脉冲和50-200 kHz的脉冲频率制备类金刚石碳膜。用Langmuir探针表征脉冲周期内和不同峰值电压幅度下的等离子体参数,该探针测量了I-V特性和电子能量分布函数。发现电子和离子密度,电子温度和平均电子能随负峰值电压而增加。此外,电子温度和带电物质密度的变化记录在高脉冲和低脉冲之间。在大约12 eV的电子能量下检测到甲烷的亚稳态解离。为了确定膜对膜特征的影响,讨论了膜的性能与通过等离子体诊断获得的生长参数的关系。薄膜的沉积速率和残余应力分别达到50 nm / min且小于1 GPa,与高功率值下电离度的提高相关。对于在高峰值电压下沉积的薄膜,表面形貌显示出粗糙度的增加,直至RMS值高达1 nm,而通过原子力显微镜在接触模式下测得的摩擦系数大致恒定。表面能通过与水的接触角测量来表征,该接触角测量值约为85度,并且与沉积条件无关。该沉积技术在工业上已经用于大面积涂层的沉积,并且特别指出用于处理涉及大量技术参数的等离子体的材料。

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