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Boron carbide films deposited by magnetron sputter- ion plating process: film composition and tribological properties

机译:通过磁控溅射-离子镀工艺沉积的碳化硼膜:膜组成和摩擦学性能

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Amorphous boron carbide films were depositedonto silicon substrates by a magnetron sputter-ion platingprocess in an argon plasma atmosphere (0.25 Pa) using a B_4Ctarget. The substrates were polarized with a d.c. bias voltage inthe range from 0 to -100 V. The film composition and thepresence of contaminants were determined by ion beam analysis(IBA). The nanoscale tribological properties were investigatedby atomic force microscopy (AFM). IBA revealed that theboron/carbon atomic ratio is around 4 and that oxygencontamination does not exceed 10 at. percent. The hydrogencontent is below 2 at. percent. The film density is nearly thebulk value for all biases applied to the substrate. AFMmeasurements show that the surface roughness decreases withincrease of bias from 0.85 to 0.15 nm. The friction coefficientobtained by lateral force measurements follows the same trend,decreasing with increasing bias from 0.25 to 0.1. Wearmeasurements were performed and the wear depth decreased forfilms with lower friction coefficients. A mechanism based onthe removal of a modified B_4C surface layer is proposed toexplain the wear results.
机译:使用B_4C靶,在氩等离子体气氛(0.25 Pa)中,通过磁控溅射离子镀工艺在硅衬底上沉积非晶碳化硼膜。用直流电将衬底极化。偏压范围为0至-100V。通过离子束分析(IBA)确定膜的组成和污染物的存在。通过原子力显微镜(AFM)研究了纳米级的摩擦学性能。 IBA透露,硼/碳原子比约为4,氧污染不超过10 at。百分。氢含量低于2at。百分。对于施加到基板上的所有偏压,膜密度几乎是整体值。原子力显微镜(AFM)测量表明,表面粗糙度在偏差的增加范围内从0.85降低至0.15 nm。通过侧向力测量获得的摩擦系数遵循相同的趋势,随着偏置从0.25到0.1的增加而减小。对于摩擦系数较低的薄膜,进行了磨损测量并降低了磨损深度。提出了一种基于去除改性B_4C表面层的机理来解释磨损结果。

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