Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

摘要

Amorphous indium zinc oxide (IZO) thin films were prepared on glass substrates by dc magnetron sputtering at room temperature. The resistivity of IZO films could be controlled between 3.8 × 10~(-3) and 2.5 × 10~6 Ω cm by varying the oxygen partial pressure during deposition, while keep the average transmittance over 83%. With IZO films as channel layers, whose surface root-mean-square roughness was less than 1 nm, thin film transistors were fabricated at room temperature, showing enhanced mode operation with good saturation characteristics, mobility of 5.2 cm~2 V~(-1) s~(-1), threshold voltage of 0.94 V and on/off ratio of ～10~4.