METHOD OF MANUFACTURING INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR AND INDIUM ZINC OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR MANUFACTURED BY METHOD

摘要

Disclosed is a method of manufacturing an indium zinc oxide semiconductor thin film transistor. A gate electrode and a gate insulating layer are formed on a substrate. A semiconductor active layer is formed by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer. A source electrode and a drain electrode are formed in the upper part of the semiconductor active layer. Therefore, the indium zinc oxide semiconductor thin film transistor can be manufactured.;COPYRIGHT KIPO 2014; [Reference numerals] (AA) Start; (BB) End; (S110) Step of forming a gate electrode on a substrate; (S120) Step of forming a gate insulating layer to cover the gate electrode on the substrate; (S130) Step of forming a semiconductor active layer by spaying a precursor solution including an indium precursor, a first zinc precursor containing no chlorine, and a second zinc precursor containing chlorine to the upper part of the gate insulating layer; (S140) Step of forming a source electrode and a drain electrode in the upper part of the semiconductor active layer