Solution-processed oxide thin film transistors with indium zinc tin oxide semiconductor: Nitrogen effect

摘要

Thin film transistors (TFTs) with nitrogen incorporated indium zinc tin oxide (IZTO:N) channel layer were fabricated and characterized. For the IZTO:N channel, TFTs was fabricated on heavily doped Si as a common gate electrode and silicon nitride (SiN_x) was used as a gate dielectric layer. The IZTO:N layer was formed by spin-coating as precursor type solution and annealed at 600°C. The precursors for indium, zinc, and tin were indium chloride, zinc chloride, and tin chloride. The incorporation of nitrogen was accomplished by addition of NH4OH solution. The IZTO:N TFT prepared with the precursor solution having 0.7% NH_4OH has show the performance in mobility 1.2cm~2/Vs, l_(on/off)of 10~6 and threshold voltage of 8.5V.