Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

摘要

Damage created by ion implantation of Ar↑(+) ions into single crystalline silicon is characterized using spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). To create buried disorder, Ar↑(+) ions with an energy of 100 kev were implanted into the samples. Ion doses were varied from 5 × 10↑(13) atom/cm↑(2) to 6.75×10↑(14) atom/cm↑(2). Damage depth profiles have been investigated using RBS combined with channeling, and SE. For the analysis of the SE data optical models were used, which consist of a stack of layers. The result proves the applicability of spectroscopic ellipsometry for the characterization of ion-implantation-caused damage, As an independent cross-checking method, Rutherford Backscattering Spectrometry was used. The RBS results basically supported the optical model of SE. # 1998 Elsevier Science Ltd. All rights reserved