Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

摘要

In this study, the damage created by ion implantation of N↑(+)↓(2) ions into single crystalline (100) silicon is characterized using Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Samples were implanted at room temperature with ion energy of 400 keV to create buried disorder RBS and channeling techniques with 1.5 MeV He↑(+) ions were used in the experiments. For the analysis of SE data we applied the method of assuming appropriate optical model and fitting the model parameters (thickness of surface oxide and damaged silicon layers and the volume fraction of amorphous silicon component in the damaged layers). The buried disorder was studied by evaluating the interference oscillations of the low photon energy range of the spectra. The optical model was independently checked by RBS experiments, Calculation using proposed optical model describes very well experimental SE data and predicts reasonably well the extent, intensity and depth of buried disorder as determined by RBS. # 1998 Elsevier Science Ltd. All rights reserved