Ultrathin ZrBxOy films as diffusion barriers in Cu interconnects

摘要

Ultra-thin ZrBxOy films 5 nm in thickness were prepared by radio-frequency (rf) magnetron sputtering. The thermal stability and the barrier performance against the inter-diffusion between Cu and Si were studied via thermal annealing at different temperatures. The as-deposited amorphous ZrBxOy thin films could effectively block the inter-diffusion of Cu and Si atoms. However, the thin films became invalid at temperatures higher than 600 degrees C and significant atomic diffusion occurred, resulting in high-resistivity Cu3Si compound. Hence, ZrBxOy thin films can be exploited as diffusion barriers in Cu interconnects at temperatures lower than 600 degrees C. (C) 2015 Elsevier Ltd. All rights reserved.