Preparation of polycrystalline CdZnTe thick film Schottky diode for ultraviolet detectors

摘要

High resistivity (3 × 10 ~9 Ω cm) polycrystalline CdZnTe thick films with thickness of 25 μm-150 μm were grown on SnO _2: F-coated glass substrates by close-spaced sublimation method. The properties of polycrystalline CdZnTe films were studied by XRD, SEM and EDS, respectively. A CdZnTe film Schottky diode detector was also fabricated and investigated using current-voltage and capacitance-voltage methods. The photo-current density of the device was about 1508.69 nA/mm ~2 under light illumination (λ = 260 nm), at an applied negative voltage of 15 V. The results showed that polycrystalline CdZnTe thick film was suitable for application in ultraviolet detectors