(001) CeO_2 films epitaxially grown on SrTiO_3 (001) substrates by pulsed laser deposition using a metallic Ce target

摘要

Cerium dioxide (CeO_2) films have been epitaxially grown on SrTiO_3 (001) substrates by pulsed laser deposition using a metallic Ce target in oxygen ambient. In situ reflection high energy electron diffraction and X-ray diffraction confirm the formation of epitaxial (001) oriented CeO_2 phase. Atomic force microscope and Raman spectra were used to characterize the surface morphologies and the bonding structures of the CeO_2 films. Epitaxial growth of thick CeO_2 films contributes chiefly to a uniform and smooth surface with root mean square roughness of up to 0.272 nm and a high-symmetry F_(2g) mode.