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(Ag,Li)NbO_3 thin films fabricated on (001), (110), and (111)SrTiO_3 substrates by pulsed laser deposition

机译:(Ag,Li)NBO_3通过脉冲激光沉积(001),(110)和(111)SRTIO_3基板上制造的NBO_3薄膜

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摘要

001-, 110-, 111-oriented (Ag_(1-x)Li_x)NbO_3 (ALN) films with x=0.05 (ALN05), 0.1 (ALN10), and 0.15 (ALN15) were fabricated on (001), (110) and (111) SrTiO_3 (STO) substrates by pulse laser deposition (PLD). The surface texture of the ALN films ware dependent on the crystal orientation of STO substrates. All the ALN films exhibited a ferroelectric behavior. The ALN films with x=0.1 deposited on (111) STO showed the largest remanent polarization of 40μC/cm~2.
机译:在(001)上制造了X = 0.05(ALN05),0.1(ALN10),0.1(ALN10)和0.15(ALN15)的001-,110-,111-111型(AG_(1-X)LI_X)NBO_3(ALN)膜,(110通过脉冲激光沉积(PLD)和(111)SRTIO_3(STO)基板(PLD)。 ALN薄膜器件的表面纹理依赖于STO基板的晶体取向。所有ALN薄膜都表现出铁电行为。沉积在(111)STO上的X = 0.1的ALN薄膜显示出40μC/ cm〜2的最大剩余偏振。

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