Ferroelectric and antiferroelectric properties of AgNbO3 films fabricated on (001), (110), and (111)SrTiO3 substrates by pulsed laser deposition

摘要

We fabricated 001, 110, and 111 oriented AgNbO3 u0002ANu0003 films on u0002001u0003SrTiO3 u0002STOu0003, u0002110u0003STO,nand u0002111u0003STO substrates by pulsed laser deposition, respectively. Scanning electron microscopenimages showed that the surface textures of the AN films on the u0002001u0003, u0002110u0003, and u0002111u0003STOnsubstrates took the form of a lattice-shaped pattern, a striped pattern, and trigonal pyramid-likenstructures, respectively. The AN film on the u0002001u0003STO had the largest relative dielectric constant ofn748 in all films. The P-E hysteresis showed that the AN film on u0002001u0003STO exhibitednantiferroelectricity and the other AN films deposited on u0002110u0003 and u0002111u0003STO showed a ferroelectricnproperty.