首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)
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Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)

机译:使用VUV激光(157 nm)从氯甲烷中光诱导化学气相沉积非晶碳膜

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摘要

Amorphous carbon (a-C) films with low hydrogen content were deposited at low substrate temperatures from a chlorinated hydrocarbon (CH_3Cl) by photoinduced chemical vpaor deposition with a fluorine laser (157 nm). The optical gap, as determined by photothermal deflection spectroscopy (PDS), decreased from 2.3 to 0.1 eV when the substrate temperature was increased from 303 to 643 K. The films were further characterized by FTIR spectroscopy. micro-Raman spectroscopy, surface acoustic wave spectroscopy (SAWS), and atomic force microscopy (AFM). The presence of chlorine residues in the films was examined by energy-dispersive X-ray fluorescence(EDXRF) spectroscopy. The amount of chlorine decreased significantly between 493 and 518 K, causing the carbon network to restructure into a more graphtic form. Deposition at 643 K produced a chlorine-free a-C film on the quartz substrate.
机译:在低衬底温度下,通过氟激光(157 nm)的光诱导化学气相沉积,从氯代烃(CH_3Cl)沉积低氢含量的非晶碳(a-C)膜。当基材温度从303 K升高到643 K时,通过光热偏转光谱(PDS)确定的光学间隙从2.3 eV降低到0.1 eV。薄膜通过FTIR光谱进一步表征。显微拉曼光谱,表面声波光谱(SAWS)和原子力显微镜(AFM)。通过能量色散X射线荧光(EDXRF)光谱法检查了膜中氯残留物的存在。氯的含量在493 K和518 K之间显着下降,从而导致碳网络重组为更石墨的形式。在643 K的温度下沉积,在石英基板上产生了无氯的a-C膜。

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