The experimental and theoretical comparison of characteristic parameters of Au-Sb-Si/Au Schottky diodes with and without layer

摘要

Schottky diodes with and without interface layers were constructed on (111) oriented n-type Si wafers. Considering ideal parameters, we researched the effect of interface layer on diode characteristics. In addition, the barrier height determined by calculating the surface potential of each diode by new model was compared to barrier height values calculated by the other methods. It was seen that the barrier height values from the experimental and theoretical methods for each diode are in close agreement each other.