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A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

机译：Au / n-Si Schottky二极管电气特性的比较研究，室温下的暗和暗和在较小下的双掺杂PVA界面层

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Sahar Alialy; Huseyin Tecimer; Habibe Uslu; AAemsettin AltAAndal;
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机译：在室温下在暗和照明中用樟子松树脂界面层的Ni / N-Si和Ni / P-Si Schottky二极管电特性的比较研究
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3. Evaluation of electrical and photovoltaic behaviours as comparative of Au-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions [J] . Cicek O., Tecimer H. Uslu, Tan S. O., Composites . 2016,第auga期

机译：评估在黑暗和光照条件下具有和不具有纯石墨烯掺杂的聚乙烯醇（PVA）界面层的Au / n-GaAs（MS）二极管的电和光伏行为的比较
4. Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs) [C] . I. Tascioglu, U. Aydemir, S. Altindal, International Congress on Advances in Applied Physics and Materials Science . 2011

机译：Au /锌掺杂聚乙烯醇（PVA：Zn）/ N-Si肖特基势垒二极管（SBD）的照明依赖性耐蒸馏特性
5. Opto-electrical studies of self-assembled monolayer diodes and bulk hetero-junction organic photovoltaic devices. [D] . Ndobe, Alexandre. 2014

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6. Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation [O] . Ashish Kumar, Shamsul Arafin, Markus Christian Amann, 2013

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7. Fabrication, Illumination Dependent Electrical and Photovoltaic Properties of Au/BOD-Pyr/n-Si/In Schottky Diode [O] . Onur Ongun, Enis Taşcı, Mustafa Emrullahoğlu, 2021

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A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature

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