Frequency dependent electrical properties of nano-CdS/Ag junctions

摘要

Polymer embedded cadmium sulfide nanoparticles/quantum dots were synthesized by a chemical route using polyvinyl alcohol (lmw) as the desired matrix. In an attempt to measure the electrical properties of nano-CdS/ Ag samples, we propose that contribution from surface traps are mainly responsible in determining the I similar to V and C similar to V characteristics in high frequency ranges. To be specific, beyond 1.2 MHz, the carrier injection from the trap centers of the embedded quantum dots is ensured by large current establishment even at negative biasing condition of the junction. The unexpected nonlinear signature of C similar to V response is believed to be due to the fact that while trying to follow very high signal frequency (at least 10(-3) of recombination frequency), there is complete abruptness in carrier trapping (charging) or/and detrapping (decay) in a given CdS nanoparticle assembly. The frequency dependent unique role of the trap carriers certainly find application in nanoelectronic devices at a desirable frequency of operation.