SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION WITH IMPROVED MAGNETIC SWITCHING PROPERTIES, AND FORMING METHOD THEREFOR (MAGNETIC TUNNEL JUNCTION WITH IMPROVED MAGNETIC SWITCHING PROPERTIES)

摘要

PROBLEM TO BE SOLVED: To provide a toggle type magnetic tunnel junction configured to be capable of precisely controlling the magnetic anisotropy axis of a ferromagnetic layer.;SOLUTION: A semiconductor device formed between a word line and bit line has a growth layer, antiferromagnetic layer formed on the growth layer, a pin layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pin layer, and a free layer formed on the tunnel barrier layer. The word line and bit line are arranged so that the two lines may become almost orthogonal to each other. Meanwhile, the growth layer has tantulum with thickness of more than about 75 Å. Furthermore, the pin layer has one or more pin ferromagnetic sublayers. The tunnel barrier layer has magnesium oxide. Lastly, the free layer has two or more free ferromagnetic sublayers having a magnetic anisotropy axis oriented to about 45 degrees from the word line and bit line, respectively. The semiconductor device can have a magnetic tunnel junction to be used in an MRAM circuit for example.;COPYRIGHT: (C)2008,JPO&INPIT