A compact model of subthreshold characteristics for short channel double-gate junctionless field effect transistors

摘要

A compact subthreshold characteristics model for short channel fully-depleted double-gate (DG) junctionless field effect transistors (JL FETs) which is based on an approximated solution of 2 dimensional Poisson’s equation has been proposed. The derivation details are introduced and the model’s accuracy has been verified by comparison with both previous models and the TCAD simulations’ results which proves that the subthreshold characteristics such as channel potential distribution, subthrethold drain-tosource current, subthreshold slope, drain-induced-barrier-lowering and threshold voltage can be accurately predicted by our proposed compact model.