Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al_2O_3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions

摘要

Hexagonal indium nitride (InN) films on (111)- and (100)-oriented yttria-stabilized zirconia (YSZ) substrates and (0001)-oriented Al_2O_3 substrates have been grown for the first time at a rate of 1 μm/h by the method of metalorganic vapor-phase epitaxy with plasma-assisted nitrogen activation in an electron cyclotron resonance discharge generated by gyrotron radiation at low-temperature (350°C) growth. InN films grown without buffer layers possess a textured polycrystalline structure. Using an InN/GaN double buffer layer, single-crystalline InN films have been obtained on Al_2O_3(0001) substrates. Data on the morphology, structure, and photoluminescent properties of the obtained InN films are presented.