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PLASMA-ASSISTED ATOMIC LAYER EPITAXY OF CUBIC AND HEXAGONAL INN FILMS AND ITS ALLOYS WITH AIN AT LOW TEMPERATURES
PLASMA-ASSISTED ATOMIC LAYER EPITAXY OF CUBIC AND HEXAGONAL INN FILMS AND ITS ALLOYS WITH AIN AT LOW TEMPERATURES
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机译:低温下立方和六方客栈薄膜及其合金的等离子体辅助原子层表彰
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摘要
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
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