Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN Films and its alloys with AlN at Low Temperatures

摘要

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.