Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers

摘要

A technique to determine experimentally the amplitude-phase coupling factor (α factor) in semiconductor laser diodes is proposed. The factor was obtained for InGaAs/AlGaAs single-quantum-well lasers with injected-carrier concentrations from 1.5 * 10~(18) to 6 * 10~(18) cm~(-3). It is shown that the α factor for such structures at the maximum of mode gain lies in the range 2-9, and its value for one and the same structure may differ severalfold, depending on the operating point of a laser.