首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >On-Chip Variability Sensor Using Phase-Locked Loop for Detecting and Correcting Parametric Timing Failures
【24h】

On-Chip Variability Sensor Using Phase-Locked Loop for Detecting and Correcting Parametric Timing Failures

机译:使用锁相环的片上可变性传感器,用于检测和校正参数时序故障

获取原文
获取原文并翻译 | 示例

摘要

Performance variability in digital integrated circuits can largely affect parametric yield and product reliability in ultra deep submicrometer technologies. As a result, variation resilience is becoming an essential design requirement for future technology nodes, especially for timing critical applications. This paper proposes an on-chip variability sensor using phase-locked loop (PLL) to detect process, supply voltage $ (V_{rm DD})$, and temperature variations (process, voltage, and temperature variation) or even temporal reliability degradation stemming from negative bias temperature instability. Our analysis shows that control voltage $ (V_{rm cnt})$ of voltage-controlled oscillator in PLL can be used as a dynamic performance signature of an operating IC. Along with the proposed PLL-based sensor circuit, we also propose a variation-resilient system technique using adaptive body biasing (ABB). The PLL $ V_{rm cnt}$ signal is efficiently transformed to an optimal body bias signal for various circuit blocks to avoid possible timing failures. Correspondingly, circuits can be designed with significantly relaxed timing constraint compared to conventional approaches, where a large amount of design resources can be wasted to take care of the worst-case situations. We demonstrated our approach on a test chip fabricated in IBM 130-nm CMOS technology. Measurement results show that the PLL-based sensor is cable of tracking various sources of circuit variations. Optimization analysis shows that 42% and 43% reduction in area and power can be obtained using our approach compared to the worst-case sizing. The proposed study refers to our previous study introduced in with major improvements in measurement results and analysis.-
机译:在超深亚微米技术中,数字集成电路的性能差异会极大地影响参数产量和产品可靠性。结果,对于未来的技术节点,尤其是对时序至关重要的应用,变异弹性已成为一项重要的设计要求。本文提出了一种使用锁相环(PLL)来检测过程,电源电压$(V_ {rm DD})$以及温度变化(过程,电压和温度变化)甚至时间可靠性下降的片上可变性传感器。源于负偏压温度不稳定性。我们的分析表明,PLL中压控振荡器的控制电压$(V_ {rm cnt})$可以用作工作IC的动态性能指标。与提出的基于PLL的传感器电路一起,我们还提出了一种使用自适应主体偏置(ABB)的变弹性系统技术。 PLL $ V_ {rm cnt} $信号被有效地转换为用于各种电路块的最佳主体偏置信号,以避免可能的时序故障。相应地,与传统方法相比,可以在电路设计时显着放松时序约束,在传统方法中,可能浪费大量设计资源来处理最坏情况。我们在以IBM 130纳米CMOS技术制造的测试芯片上演示了我们的方法。测量结果表明,基于PLL的传感器是跟踪各种电路变化源的电缆。优化分析表明,与最坏情况下的尺寸相比,使用我们的方法可以减少42%和43%的面积和功耗。拟议的研究引用了我们先前引入的研究,其中对测量结果和分析进行了重大改进。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号