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A 3.57 Gb/s/pin Low Jitter All-Digital DLL With Dual DCC Circuit for GDDR3 DRAM in 54-nm CMOS Technology

机译:具有双DCC电路的3.57 Gb / s / pin低抖动全数字DLL,用于采用54nm CMOS技术的GDDR3 DRAM

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This paper presents an all digital delay-locked loop (DLL) which achieves low jitter and stable duty cycle correction (DCC) operation. Since the DLL has dual DCC circuit, with the combinations of two DCC circuits, the DLL can correct $+$12.9% and $-$6.13% duty error under 2% at 333 MHz with 1.6 V. The DLL operates up to 1.67 GHz with 1.8 V and 1.78 GHz with 2.0 V supply voltage, and its peak-to-peak jitter at 1.4 GHz with 1.8 V is 29 ps. The power dissipations are 4.2 mW (5 mW) at 100 MHz and 19.8 mW (29.5 mW) at 1 GHz with 1.5 V (1.8 V) supply voltage with the help of the update gear circuit from the previous work. And the DLL is fabricated with 54-nm DRAM CMOS technology. The active area of the DLL is 0.11 mm$^{2}$.
机译:本文提出了一种全数字延迟锁定环(DLL),它可以实现低抖动和稳定的占空比校正(DCC)操作。由于DLL具有双DCC电路,并且具有两个DCC电路的组合,因此DLL可以在1.6 MHz的333 MHz下在2%以下的情况下校正$ + $ 12.9%和$-$ 6.13%的占空比误差。DLL在1.8的频率下最高可运行1.67 GHz电源电压为2.0 V时为V和1.78 GHz,1.4 V和1.8 V时其峰峰值抖动为29 ps。借助先前工作中的更新齿轮电路,在1.5 V(1.8 V)电源电压下,在100 MHz时的功耗为4.2 mW(5 mW),在1 GHz时为19.8 mW(29.5 mW)。 DLL采用54纳米DRAM CMOS技术制造。 DLL的活动区域为0.11 mm $ ^ {2} $。

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