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A low-jitter wide-range skew-calibrated dual-loop DLL usingantifuse circuitry for high-speed DRAM

机译:低抖动,宽范围偏斜校准的双环DLL,采用反高速电路,用于高速DRAM

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This paper describes a delay-locked loop (DLL) circuit having twonadvancements, a dual-loop operation for a wide lock range andnprogrammable replica delays using antifuse circuitry and internalnvoltage generator for a post-package skew calibration. The dual-loopnoperation uses information from the initial time difference betweennreference clock and internal clock to select one of the differentialninternal loops. This increases the lock range of the DLL to the lowernfrequency. In addition, incorporation of the programmable replica delaynusing antifuse circuitry and the internal voltage generator allows fornthe elimination of skews between external clock and internal clock thatnoccur from on-chip and off-chip variations after the package process.nThe proposed DLL, fabricated on 0.16-Μm DRAM process, operates overnthe wide range of 42-400 MHz with 2.3-V power supply. The measurednresults show 43-ps peak-to-peak jitter and 4.71-ps rms jitter consumingn52 mW at 400 MHz
机译:本文介绍了一种具有两个改进的延迟锁定环路(DLL)电路,用于宽锁定范围的双环路操作以及使用反熔丝电路和Internalnvoltage发生器进行可编程的复制延迟,以进行封装后偏斜校准。双循环操作使用来自参考时钟和内部时钟之间初始时间差的信息来选择差分内部环路之一。这将DLL的锁定范围增加到更低的频率。此外,通过使用反熔丝电路和内部电压发生器来实现可编程副本延迟的结合,可以消除封装工艺后由于片内和片外变化而导致的外部时钟与内部时钟之间的时滞。 Mm DRAM工艺使用2.3V电源在42-400 MHz的宽范围内运行。测得的结果显示,在400 MHz时峰峰值抖动为43 ps,均方根抖动为4.71 ps,功耗为52 mW

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