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Adaptive Write and Shift Current Modulation for Process Variation Tolerance in Domain Wall Caches

机译:自适应写和移位电流调制,用于域墙高速缓存中的过程变化容差

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Domain wall memory (DWM), also known as racetrack memory, is gaining significant attention for embedded cache application due to low standby power, excellent retention, and the ability to store multiple bits per cell. In addition, it offers fast access time, good endurance, and retention. However, it suffers from poor write latency, shift latency, shift power, and write power. In addition, we observe that process variation can result in a large spread in write and read latency variations. The performance of conventionally designed DWM cache can degrade as much as 13% due to process variations. We propose a novel and adaptive write current and shift current boosting to address this issue. The bits experiencing worst case write latency are fixed through a combination of write and shift boosting, whereas worst case read bits are fixed by shift boosting. Simulations show a 30% dynamic energy improvement compared with boosting all bit-cells and a 18% performance improvement compared with worst case latency due to process variation over a wide range of PARSEC benchmarks.
机译:域墙内存(DWM),也称为跑马场内存,由于低待机功耗,出色的保留能力以及每个单元存储多个位的能力而在嵌入式缓存应用中引起了广泛关注。另外,它提供了快速的访问时间,良好的耐用性和保留性。但是,它遭受较差的写入延迟,移位延迟,移位功率和写入功率。此外,我们观察到过程变化会导致写入和读取等待时间变化大幅度扩散。由于过程变化,常规设计的DWM缓存的性能可能下降多达13%。我们提出了一种新颖的自适应写电流和移位电流升压解决此问题。发生最坏情况写入延迟的位是通过写和移位增强的组合来固定的,而最坏情况下读取位是通过移位增强来固定的。仿真显示,由于在各种PARSEC基准范围内的工艺差异,与提高所有位单元相比,动态能量改善了30%,与最坏情况下的延迟相比,性能改善了18%。

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