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DWM-TAPESTRI - An energy efficient all-spin cache using domain wall shift based writes

机译:DWM-TAPESTRI-使用基于域墙移位的写入的节能全旋转缓存

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Spin-based memories are promising candidates for future on-chip memories due to their high density, non-volatility, and very low leakage. However, the high energy and latency of write operations in these memories is a major challenge. In this work, we explore a new approach - shift based write - that offers a fast and energy-efficient alternative to performing writes in spin-based memories. We propose DWM-TAPESTRI, a new all-spin cache design that utilizes Domain Wall Memory (DWM) with shift based writes at all levels of the cache hierarchy. The proposed write scheme enables DWM to be used, for the first time, in L1 caches and in tag arrays, where the inefficiency of writes in spin memories has traditionally precluded their use. At the circuit level, we propose bit-cell designs utilizing shift-based writes, which are tailored to the differing requirements of different levels in the cache hierarchy. We also propose pre-shifting as an architectural technique to hide the latency of shift operations that is inherent to DWM. We performed a systematic device-circuit-architecture evaluation of the proposed design. Over a wide range of SPEC 2006 benchmarks, DWM-TAPESTRI achieves 8.2X improvement in energy and 4X improvement in area, with virtually identical performance, compared to an iso-capacity SRAM cache. Compared to an iso-capacity STT-MRAM cache, the proposed design achieves around 1.6X improvement in both area and energy under iso-performance conditions.
机译:基于自旋的存储器由于其高密度,非易失性和非常低的泄漏而有望成为未来片上存储器的候选者。然而,这些存储器中写入操作的高能量和等待时间是主要挑战。在这项工作中,我们探索了一种新的方法-基于移位的写入-为在基于自旋的存储器中执行写入提供了一种快速且节能的替代方法。我们提出了DWM-TAPESTRI,这是一种新的全旋转缓存设计,该设计利用域壁内存(DWM)在缓存层次结构的所有级别上进行基于移位的写入。所提出的写入方案使DWM首次在L1高速缓存和标签阵列中使用,而自旋存储器中写入效率低下通常会阻止使用它们。在电路级,我们提出利用基于移位的写的位单元设计,这些写是针对高速缓存层次结构中不同级别的不同要求而量身定制的。我们还建议将预移位作为一种体系结构技术来隐藏DWM固有的移位操作延迟。我们对提出的设计进行了系统的器件电路架构评估。与等容量的SRAM缓存相比,在众多SPEC 2006基准测试中,DWM-TAPESTRI的能耗降低了8.2倍,面积减少了4倍,性能几乎相同。与等容量的STT-MRAM高速缓存相比,该建议的设计在等性能条件下的面积和能耗均提高了约1.6倍。

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