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首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >A 0.13- μm CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation
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A 0.13- μm CMOS Dynamically Reconfigurable Charge Pump for Electrostatic MEMS Actuation

机译:用于静电MEMS驱动的0.13μmCMOS动态可重构电荷泵

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摘要

An eight-stage reconfigurable charge pump for microelectromechanical system (MEMS) electrostatic actuation was designed and fabricated in a standard 0.13-μm CMOS technology. The purpose of the circuit is to generate sufficient on-chip voltages that are continually reconfigurable for MEMS actuation. Small 1-pF pumping capacitors are used to reduce the circuit area. Digitally programmable voltage levels can be out putted by varying the number of stages and the clock drive levels dynamically. Reduced power consumption is achieved using a variable frequency clock. The circuit attains a measured maximum output voltage of 10.1 V from a 1.2 V supply. Its nominal clock is set to 50 MHz. The circuit has a compact area of 215 μm × 300 μm and consumes 864 μW at a 50-MHz clock and 252 μW at an 8-MHz clock.
机译:采用标准0.13μmCMOS技术设计和制造了用于微机电系统(MEMS)静电致动的八级可重构电荷泵。该电路的目的是产生足够的片上电压,这些电压可连续重新配置用于MEMS驱动。小型1-pF抽运电容器用于减小电路面积。通过动态改变级数和时钟驱动电平,可以输出数字可编程电压电平。使用变频时钟可以降低功耗。该电路从1.2 V电源获得的实测最大输出电压为10.1V。其标称时钟设置为50 MHz。该电路的紧凑面积为215μm×300μm,在50MHz时钟下消耗864μW,在8MHz时钟下消耗252μW。

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