Performance enhancement of AlGaN-based deep ultraviolet light-emitting diodes by using stepped and super-lattice n-type confinement layer

摘要

In this paper, a new n-type confinement layer that uses the stepped and super-lattice structure to replace conventional n-type AlGaN layer of deep ultraviolet light-emitting diode (DUV LED) is investigated. The simulation results indicate that the new structure significantly enhances the light output power (LOP) and internal quantum efficiency (IQE) of DUV LED. This is because the capability of carrier confinement in the quantum wells (QWs) is enhanced; the carrier concentrations and the radiative recombination rate in the active region of DUV LED are improved.