Manipulation of resistive state of silicon oxide memristor by means of current limitation during electroforming

摘要

Resistive switching and adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive devices subjected to electroforming in the conditions of current compliance in comparison with the analogous memristive devices after electroforming without any current limitation. The limitation of current and temperature during electroforming affects the parameters of growing conductive filament ensembles and reduction oxidation reactions resulting in a gradual character and a wide dynamic range of resistance change important for neuromorphic applications.