4H-SiC double-layer thin n-base light triggered thyristor with a trenched-junction isolated amplifying gate

摘要

In this paper, a new 4H-SiC double-layer thin n-base LTT with a trenched junction isolated amplifying gate is proposed and investigated to compensate for the shortcomings of the conventional SiC amplifying gate structures. By using double-layer thin n-base structure, the turn-on performance of the pilot LTT is improved. According to simulations, the trenched-junction isolated amplifying gate works well and the turn-on delay of the proposed device is only 451 ns, when triggered by 500 mW/cm(2) ultraviolet light. Meanwhile, the breakdown voltage remains higher than 10 kV. Comparing with conventional resistance isolated amplifying gate and trench isolated amplifying gate, the proposed trenched-junction isolated gate structure shows better performances in both area utilization and blocking characteristic.