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Effect of substrate temperature on the suitability of thermally deposited cadmium sulfide thin films as window layer in photovoltaic cells

机译:基板温度对热沉积硫化镉薄膜作为光伏电池窗口层的适用性的影响

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Cadmium sulfide has been studied as an important material in solar energy research because of its energy band gap and attractive electrical characteristics. While thin films of cadmium sulfide have been found to be useful as window layer in a solar cell, the role of various deposition parameters is yet to be understood. In the current study, the role of substrate temperature on the characteristics of the CdS thin films is analyzed. Thin films of cadmium sulfide (-450 nm thick) were deposited at various substrate temperatures viz., 300 K, 323 K, 373 K, and 423 K onto clean glass substrates by vacuum thermal evaporation method. The structural, morphological, and opto-electrical properties of the deposited films were studied as a function of substrate temperature. X-ray diffraction (XRD) study revealed that the thin films are polycrystalline in nature and having a hexagonal wurtzite crystal structure along (002) plane. Scanning electron microscopy (SEM) along with energy dispersive spectroscopy (EDS) revealed that the grown films are homogeneous, uniform and pin-hole free. All the films deposited at various substrate temperature displayed high optical transmittance ( 60%) in the visible range. The optical energy band gap of the films was estimated using Tauc's plot and was found to increase by a slight margin with an increase in the substrate temperature and decrease at higher substrate temperature. The photosensitivity was found to be highest for the CdS thin film grown at a substrate temperature of 373 K.
机译:硫化镉因其能带隙和吸引人的电学特性而被研究为太阳能研究中的重要材料。尽管已经发现硫化镉的薄膜可用作太阳能电池中的窗口层,但各种沉积参数的作用尚待了解。在当前的研究中,分析了基板温度对CdS薄膜特性的影响。通过真空热蒸发法,在300 K,323 K,373 K和423 K的各种基板温度下,将硫化镉薄膜(-450 nm厚)沉积到干净的玻璃基板上。研究了沉积膜的结构,形态和光电性能随衬底温度的变化。 X射线衍射(XRD)研究表明,该薄膜本质上是多晶的,沿(002)平面具有六方纤锌矿型晶体结构。扫描电子显微镜(SEM)以及能量色散光谱(EDS)显示,生长的薄膜均匀,均匀且无针孔。在各种基材温度下沉积的所有薄膜在可见光范围内均显示出高透光率(> 60%)。薄膜的光能带隙是用Tauc曲线估算的,随底物温度的升高略有增加,而在较高的底物温度下则减小。发现在373 K的衬底温度下生长的CdS薄膜的光敏度最高。

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