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Cadmium sulfide thin films deposited by close spaced sublimation and cadmium sulfide/cadmium telluride solar cells.

机译:通过近距离升华和硫化镉/碲化镉太阳能电池沉积的硫化镉薄膜。

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摘要

One of the applications of CdS films is as a window layer in CdTe and Cu(In,Ga);CdS films have been deposited by the close-spaced sublimation technique. The influence of the main process parameters, the substrate and source temperatures, and the ambient in the deposition chamber has been investigated. As-deposited films have been subjected to heat treatments in ;It was found that as deposited CdS films have a hexagonal structure independent of the process parameters used. The presence of a CdO phase was detected in the samples grown with the highest oxygen concentration in the ambient. The resistivity of CdS films is controlled by intergrain barriers. Photoluminescence measurements showed the presence of oxygen-acceptor transition and a wide variation in the intensity of deep emission bands. The variation in the intensities was correlated with the variation in the deposition and annealing conditions. However, no correlation was found between the PL intensities of defect bands and cell performance.;CdS/CdTe junctions have been fabricated using standard deposition and postgrowth techniques developed in the USF solar cells laboratory. All cells have been characterized by light and dark current-voltage (I-V) measurements. Based on the I-V results samples were selected for Quantum Efficiency (QE), and I-V-T measurements.;The goal of this project was to understand what properties of CdS are important for the formation of a good electrical CdS/CdTe junction and high efficiency solar cells. It was found that passivation of the CdS/CdTe interface is essential to obtain efficient devices. The passivation can be achieved by promoting mixing at the interface or by performing a heat treatment of the CdS surface prior to the CdTe deposition. For the latter case no noticeable intermixing at the CdS/CdTe interface occurs. Therefore, it is suggested that the CdS/CdTe interface is the most critical part of the device and the condition of the CdS surface just before CdTe deposition is one of the factors controlling its formation.;To date, the best device has shown an efficiency of 15.1% as verified at the National Renewable Energy Laboratory. It is the highest efficiency reported for an all CSS fabricated solar cell. The best all CSS device fabricated on LOF glass substrate demonstrated an efficiency of 14.3%, which is a new record for the USF solar cell laboratory.
机译:CdS薄膜的应用之一是作为CdTe和Cu(In,Ga)的窗口层; CdS薄膜已通过近距离升华技术沉积。已经研究了主要工艺参数,衬底和源极温度以及沉积室中环境的影响。所沉积的CdS薄膜具有六边形结构,与所使用的工艺参数无关。在环境中氧气浓度最高的样品中检测到CdO相的存在。 CdS膜的电阻率由晶间势垒控制。光致发光测量表明存在氧-受体跃迁和深发射带强度的广泛变化。强度的变化与沉积和退火条件的变化相关。但是,缺陷带的PL强度与电池性能之间没有发现相关性。CdS / CdTe结已使用USF太阳能电池实验室开发的标准沉积和后生长技术制造。所有电池均已通过亮和暗电流-电压(I-V)测量来表征。根据IV结果,选择样品进行量子效率(QE)和IVT测量;该项目的目的是了解CdS的哪些特性对于形成良好的CdS / CdTe电结和高效太阳能电池很重要。已经发现,CdS / CdTe接口的钝化对于获得高效器件至关重要。可以通过促进界面处的混合或通过在CdTe沉积之前对CdS表面进行热处理来实现钝化。对于后一种情况,在CdS / CdTe界面上不会出现明显的混合。因此,建议CdS / CdTe界面是器件的最关键部分,而刚好在CdTe沉积之前CdS表面的状况是控制其形成的因素之一。迄今为止,最好的器件已显示出效率经国家可再生能源实验室验证为15.1%。这是所有CSS制造的太阳能电池的最高效率。在LOF玻璃基板上制造的最佳全CSS器件显示出14.3%的效率,这是USF太阳能电池实验室的新记录。

著录项

  • 作者单位

    University of South Florida.;

  • 授予单位 University of South Florida.;
  • 学科 Engineering Materials Science.;Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1998
  • 页码 77 p.
  • 总页数 77
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:48:45

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