薄膜太阳电池缓冲层硫化镉的制备

摘要

The buffer layer of CdS thin films for solar cells were prepared in the general load slides by a simple chemical bath deposition (CBD). By changing the experimental conditions such as the pH value of the solution and the annealing temperature, the optimum preparation technology of CdS thin film was discussed. The thin film samples were characterized by X - ray diffraction, UV - Vis spectrophotometer and electrochemical workstation. The experimental results showed that the best experimental conditions for the preparation of CdS thin films with good uniformity, density and coverage were as the reaction temperature being 70℃, the solution pH value being 10 and the subsequent heat treatment at 350℃ being 1 hour. Under this condition, the visible light transmittance of the film was higher with obvious phenomenon of the visible light transmittance. By calculating, the band gap of the films was 2.35 eV which was very close to the theoretical value(2.42 eV).%采用操作简单的化学水浴法（CBD）在普通载玻片上制备了太阳能电池用缓冲层硫化镉薄膜。通过改变反应温度、溶液pH值和退火温度等实验条件，探讨了硫化镉薄膜的最佳制备工艺条件，并利用X射线衍射仪、紫外-可见-分光光度计和电化学工作站对生成的薄膜样品进行了表征。结果表明，制备均匀性好、致密、覆盖度好的硫化镉薄膜的最佳实验条件如下：反应温度为70℃，溶液pH值为10，且后续在350℃温度下进行热处理1 h。此条件下得到的硫化隔薄膜的可见光透过率较高，具有明显的光电导现象；通过计算，最优实验条件下获得薄膜的禁带宽度为2.35 eV，与理论值2.42 eV很接近。