THE INFLUENCE OF INTERFACIAL GROWTH PATTERNS ON THE TRANSMISSION PROPERTIES OF CARRIERS THROUGH NONABRUPT GaAs/Al_xGa_(1-x)As SINGLE BARRIERS

摘要

The influence of interfacial growth patterns on the tunelling of carriers through nonabrupt GaAs/Al_xGa_(1-x)As single barriers is studied. Five interfacial growth patterns are considered, all of them representative of interfacial alloy variations generated by different growth techniques. With a generalization of the scheme proposed previously by Freire et al [Superlatt. Microstruct. 1, 17 (1992)], the inter-related single barrier potential and effective mass is obtained. The envelope function equation with a position dependent kinetic energy operator is solved with a multistep scheme. The position of the resonant peaks, their peak-to-valley ratios, and the mean width of the resonance structures are shown to depend on the interfacial growth patterns.