ENERGY LEVELS OF SINGLE NONABRUPT GaAs/Al_xGa_(1-x)As QUANTUM WELLS

摘要

Energy levels of electrons in nonabrupt GaAs/Al_xGa_(1-x)As single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt GaAs/Al_xGa_(1-x)As quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry.