ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GaAs/Al_xGa_(1-x)As HETEROJUNCTIONS

Alexander K. Freire; J. Ribeiro Filho; Oil A. Farias; Valder N. Freire

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ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GaAs/Al_xGa_(1-x)As HETEROJUNCTIONS

机译：掺杂的非绝对GaAs / Al_xGa_（1-x）异质结的堆积层和界面效应

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A theoretical model is proposed to describe doped nonabrupt GaAs/Al_xGa_(1-x)As heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface effects are important in the case of high doping levels, and wide GaAs/Al_xGa_(1-x)As interfaces.

机译：提出了一个理论模型来描述掺杂的非突变GaAs / Al_xGa_（1-x）As异质结。它用于研究界面对这些异质结构中电子的传输特性和能级的影响。结果表明，在高掺杂水平和宽GaAs / Al_xGa_（1-x）As界面的情况下，界面效应很重要。

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《Superlattices and microstructures》 |1995年第4期|p.351-354|共4页
作者
Alexander K. Freire; J. Ribeiro Filho; Oil A. Farias; Valder N. Freire;
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Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici Centro de Ciencias Exatas, Caixa Postal 6030 60455-760 Fortaleza, Ceara, Brazil;

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正文语种 eng
中图分类物理学;
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1. Comprehensive study of InGaP/Al_xGa_(1-x)As/GaAs heterojunction bipolar transistors with different doping concentrations of Al_xGa_(1-x)As graded layers [J] . Shiou-Ying Cheng, Jing-Yuh Chen, Chun-Yuan Chen, Semiconductor science and technology . 2004,第3期

机译：掺杂浓度不同的Al_xGa_（1-x）As梯度层的InGaP / Al_xGa_（1-x）As / GaAs异质结双极晶体管的综合研究
2. The influence of growth patterns on the transmission properties of nonabrupt GaAs/Al_xGa_(1-x)As heterojunctions [J] . JOSE RIBEIRO FILHO, GIL A. FARIAS, VALDER N. FREIRE Superlattices and microstructures . 1996,第2期

机译：生长方式对非突变GaAs / Al_xGa_（1-x）As异质结传输特性的影响
3. TRANSMISSION IN COMPOSITIONALLY NONABRUPT GaAs/Al_xGa_(1-x)As HETEROJUNCTIONS: BEYOND THE CONSTANT INTERFACIAL EFFECTIVE-MASS APPROXIMATION [J] . J. Ribeiro Filho, G. A. Farias, V. N. Freire Superlattices and microstructures . 1995,第1期

机译：组合非绝对GaAs / Al_xGa_（1-x）As异质结的传输：在恒定界面有效质量近似之外
4. Analysis of Improved DC and AC Performances of an InGaP/GaAs Heterojunction Bipolar Transistor with a Graded Al_xGa_(1-x)As Layer at Emitter/Base Heterojunction [C] . Shiou-Ying Cheng 33rd European Solid-State Device Research Conference (ESSDERC 2003); Sep 16-18, 2003; Estoril, Portugal . 2003

机译：在发射极/基极异质结处具有渐变Al_xGa_（1-x）As层的InGaP / GaAs异质结双极晶体管的改进的DC和AC性能分析
5. Acoustic phonon scattering in modulation doped aluminum(x) gallium(1-x) arsenide/gallium arsenide heterojunctions. [D] . Manion, Stephen Joseph. 1988

机译：调制掺杂的砷化铝（x）镓（1-x）/砷化镓异质结中的声子散射。
6. Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells [O] . Jinling Yu, Xiaolin Zeng, Shuying Cheng, 2016

机译：通过在绝缘GaAs / AlGaAs量子阱的界面处插入超薄InAs层来调整Rashba / Dresselhaus自旋分裂
7. Noise Characteristics of 100nm-scaleGaAs/Al_xGa_{1-x}As Scanning Hall Probes [O] . Hicks, C.W., Luan, L., Moler, K.A., 2007

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8. Doping Effects and Compositional Grading in Al(x)Ga(1-x)As/GaAs Heterojunction Bipolar Transistors [R] . Chand, N., Morkoc, H. 1985

机译：al（x）Ga（1-x）as / Gaas异质结双极晶体管的掺杂效应和成分分级

ACCUMULATION LAYER AND INTERFACE EFFECTS IN DOPED NONABRUPT GaAs/Al_xGa_(1-x)As HETEROJUNCTIONS

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