An InGaP/ALGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity

摘要

Based on the insertion of a compositionally linear-graded AlGaAs layer between an InGaP emitter and GaAs base (cap) layer, the zero conduction-band discontinuity and completely reduced potential spike at the emitter-base junction could be obtained in a heteroj unction bipolar transistor. This device exhibits not only excellent dc characteristics but also better rf performances. Consequently, the designed structure provides promise in high-performance microwave device applications.