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Characterization of structure and magnetism in Zn_(1_x)(Co_x/Mn_x)O epitaxial thin films as a function of composition

机译:Zn_(1_x)(Co_x / Mn_x)O外延薄膜的结构和磁性随组成的变化

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摘要

We have investigated the non-equilibrium solubility of Mn and Co in Zn_(1_x)TM_xO (x = 5-30 at.% TM = Co, Mn) single crystal thin film and the role of Co/Mn concentration on the structural and magnetic properties. The films have been grown by pulsed laser deposition and the structural and magnetic characterization has been performed using high resolution transmission electron microscopy and superconducting quantum interference device respectively. Cobalt shows high solubility in single crystalline ZnO films with no tendency to form incoherent secondary precipitates up to 30 at.%. Whereas for Mn:ZnO, secondary precipitate started forming from Mn concentration of 25 at.% and above. HREELS of both Co and Mn L_(2,3) absorption edges shows that the Co and Mn atoms have substituted the Zn positions in the lattice. ZnO doped with 30 at.% Mn forms single crystalline spinel Mn_3O_4 phase on the sapphire substrate in the form of an interlayer which is responsible for aligning subsequent Mn:ZnO film with respect to sapphire as [ 11 -2 0]A1_O_3‖[ 11 -2 0] ZnO compared to the usual [11-2 0]A1_2 O_3‖[01 -10] ZnO orientation. Saturation magnetization remained almost the same (~10~20-10~21 μB/cm~3) for Co:ZnO but a composition dependent coercivity has been observed. For Zn_(o.75)Co_(0.25)O film, the coercivity is ~922 (769) Oe corresponding to applied field perpendicular (parallel) to the c axis, which is the highest value reported in this system. For Mn:ZnO ferromagnetism disappears beyond Mn concentrations of 15 at.%.
机译:我们研究了Mn和Co在Zn_(1_x)TM_xO(x = 5-30 at。%TM = Co,Mn)单晶薄膜中的非平衡溶解度以及Co / Mn浓度对结构和磁性的作用属性。薄膜是通过脉冲激光沉积法生长的,并且分别使用高分辨率透射电子显微镜和超导量子干涉仪进行了结构和磁性表征。钴在单晶ZnO膜中显示出高溶解度,最高30 at。%时没有形成不连贯的二次沉淀的趋势。而对于Mn:ZnO,从25at。%或更高的Mn浓度开始形成二次沉淀。 Co和Mn L_(2,3)吸收边缘的HREELS表明,Co和Mn原子已经取代了晶格中的Zn位置。掺杂了30 at。%Mn的ZnO以中间层的形式在蓝宝石衬底上形成单晶尖晶石Mn_3O_4相,该中间层负责将后续的Mn:ZnO膜相对于蓝宝石对齐为[11 -2 0] A1_O_3′[11- 2 0] ZnO与通常的[11-2 0] A1_2 O_3′[01 -10] ZnO取向相比。 Co:ZnO的饱和磁化强度几乎保持相同(〜10〜20-10〜21μB/ cm〜3),但是观察到成分依赖性矫顽力。对于Zn_(o.75)Co_(0.25)O薄膜,矫顽力为〜922(769)Oe,对应于与c轴垂直(平行)的施加场,这是该系统中报告的最大值。对于Mn:ZnO铁磁性,当Mn浓度达到15 at。%时消失。

著录项

  • 来源
    《Superlattices and microstructures》 |2013年第11期|289-297|共9页
  • 作者单位

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India,Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India,Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India,Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

    Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

    Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

    International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Laser epitaxy; B2. Magnetic materials; B1. Oxides; B2. Semiconductor Ⅱ-Ⅵ materials;

    机译:A3。激光外延;B2。磁性材料;B1。氧化物;B2。半导体Ⅱ-Ⅵ材料;

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