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Electrochemical preparation of microstructured porous silicon layers for drug delivery applications

机译:用于药物输送应用的微结构多孔硅层的电化学制备

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摘要

Porous silicon (PSi) has emerged as a potential drug delivery vehicle because of its high surface area to volume ratio, convenient surface chemistry, biocompatibility and very low toxicity. PSi based drug delivery systems can be easily prepared by tuning its morphological characteristics (i.e. porosity, pore size, etc.). In the present study, several PSi single layers were prepared in order to study effect of current density and etching time on PSi morphology. Different characterization techniques including UV-VIS spectrometry and field emission gun scanning electron microscopy have been used to determine porosity, pore size and thickness of PSi layers. The results showed a higher porosity and larger pore size at high current density. Etching rate was also found to be more at higher current density. Thickness of PSi layer was increased with increase in etching time.
机译:多孔硅(PSi)由于其高的表面积/体积比,方便的表面化学作用,生物相容性和极低的毒性,已成为潜在的药物递送载体。基于PSi的药物递送系统可以通过调整其形态特征(即孔隙度,孔径等)来轻松制备。在本研究中,准备了几个PSi单层,以研究电流密度和蚀刻时间对PSi形态的影响。已使用包括UV-VIS光谱法和场发射枪扫描电子显微镜在内的不同表征技术来确定PSi层的孔隙率,孔径和厚度。结果显示在高电流密度下较高的孔隙率和较大的孔径。在较高的电流密度下,蚀刻速率也更高。 PSi层的厚度随着蚀刻时间的增加而增加。

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