Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes by inserting single spike barriers

摘要

The characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with inserted single spike barriers have been investigated. Simulation approach yields a result that, the internal quantum efficiency (IQE), light output power (LOP) and efficiency droop were remarkably improved compared to those with conventional AlGaN multiple quantum wells (MQWs) structures. The key factors for the performance improvements are the modulation of carrier distribution and the increase of the overlap between electron and hole wave functions in MQWs contributing to more efficient recombination of electrons and holes, and thereby a significant enhancement in IQE and light output power.